In the present work we develop a theoretical study to analyze how the image charges effects can modify the electronic properties in Si and SrTiO3-based quantum wells. We have used the method based on the calculation of the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results show that the electron-heavy hole recombination energy can be shifted by more than 200 meV due to the combination of charge image and SiO2 (SrTiO3) interface thickness effects.

The energy spectrum and optical absorption of confined carriers in ellipsoidal CdSe quantum dots are calculated. Our model relies on the effective mass approximation and Fermi's golden rule for the electronic structure and optical properties, respectively. We demonstrate that the electronic structure and the interband optical absorption are highly dependent on the ellipsoid aspect ratio.

We report a detailed analysis of how the existence of interface roughness can change exciton localization in CdTe/Cd1-xMn xTe strained double quantum wells (DQW´s) taking into account magnetic and electric field effects. We consider that the potential, effective mass, and the intrinsic magnetization are dependent on the profile of the Mn molar fraction at the interfacial region. Results obtained with CdTe/Cd0.68Mn0.32Te DQW´s show that the energy band tailoring generated by the strain and the Zeeman effect is responsible by a displacement of the exciton energy peaks and that small changes in the interface width (10 Å) can be responsible for 30 meV exciton energy broadening.

In order to analyze the charging effects on electronic spectrum of Silicon (Si) based quantum wells (QW's), we use a method based on the calculation of the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results shows that the confined electron ground state energy level can be shifted by more than 50 meV due to the contribution of the image charges to the confinement potential of the graded quantum well.